journal article·1993-12

Transport near the mobility edge, the sign of the hall effect, photoreduction and oxidation of amorphous InOχ

B. Pashmakov, B. Claflin, H. Fritzsche

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Phase-change materials and chalcogenides

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References (8)

Show source-provided references
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2. Ovadyahu · J. Phys. C · 1986 · 19 · 518710.1088/0022-3719/19/26/018 ↗
3. Rosenbaum · Phys. Rev. B · 1991 · 44 · 359910.1103/PhysRevB.44.3599 ↗
4. Pashmakov · Solid State Commun. · 1993 · 86 · 61910.1016/0038-1098(93)90826-9 ↗
5. Fritzsche · Solar Energy Materials and Solar Cells · 1993
6. Fritzsche · Solar Energy Materials · 1980 · 3 · 44710.1016/0165-1633(80)90001-5 ↗
7. Kakalios · J. Non-Cryst. Solids · 1989 · 114 · 37210.1016/0022-3093(89)90167-1 ↗
8. Mott · Philos. Mag. · 1991 · B63 · 310.1080/01418639108224426 ↗