Charge Relaxation in Chalcogenide Films under Electron Beam Irradiation
Source abstract
Abstract
We studied processes of charge relaxation after point irradiation of As xSe 100-x and Ge xSe 100-x chalcogenide films with an electron beam. Two relaxation processes were found in the dose range from 2,05 * 10 2 μCcm −2 to 9,3 * 10 7 μCcm −2. The relaxation times of these processes differ by more than 10 3 times. It is shown that the first relaxation process is associated with the relaxation of the positive charge in the near-surface region of irradiated film. The second, slower relaxation process is due to the process of the formation of a negative charge layer inside the film and electron-induced mass transport under the action of an internal electric field.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties
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References (27)
Show source-provided references
1. Phase-change materials for rewriteable data storage10.1038/nmat2009 ↗
2. Metamaterial electro-optic switch of nanoscale thickness10.1063/1.3355544 ↗
3. An All-Optical, Non-volatile, Bidirectional, Phase-Change Meta-Switch10.1002/adma.201300588 ↗
4. Chalcogenide photonics10.1038/nphoton.2011.309 ↗
5. Integrated flexible chalcogenide glass photonic devices10.1038/nphoton.2014.138 ↗
6. n-type chalcogenides by ion implantation
7. A Chronological Overview of Phase-Change Materials, Rev10.1166/rase.2015.1087 ↗
8. Recent Advances in Chalcogenide Glasses for Multifunctional Applications in Fiber Optics10.2174/1874464811306010059 ↗
9. "Recent Applications of Chalcogenide Glasses (ChGs) based Sensors" in Advances in Modern Sensors, G. R. Sinha(ed.), IOP Publishing, 2020, pp. 4-1 to 4-21. doi:10.1088/978-0-7503-2707-7.10.1088/978-0-7503-2707-7 ↗
10. Advances in Chalcogenide Glasses (ChGs): Past, Present, and Future Applications
11. Polarization - dependent photoplastic effect in As50Se50 chalcogenide glasses
12. The non-Hookian behavior of chalcogenide glasses under irradiation: A nanoindentation study10.1016/j.jnoncrysol.2007.02.042 ↗
13. Laser Recording in Chalcogenide Glass Films: Driving Forces and Kinetics of the Mass Transfer
14. Formation of Nanoscale Structures on Chalcogenide Films
15. Single laser beam-induced surface deformation on azobenzene polymer films10.1063/1.122292 ↗
16. Fabrication of meso- and nano-scale structures on surfaces of chalcogenide semiconductors by surface hydrodynamic interference patterning10.1088/2053-1591/2/10/105201 ↗
17. Z. U. Borisova, Chalcogenide semiconductor glasses, L.: Leningrad University, (1983) 344p. (in Russian).
18. Study of dependence of electron beam induced surface relief formation on Ge-As-Se thin films on the film elemental composition10.1016/j.jnoncrysol.2016.10.033 ↗
19. Evaluation of sensitivity of Ge9As9Se82 and Ge16As24Se60 thin films to irradiation with electron beam10.1016/j.jnoncrysol.2018.10.042 ↗
20. Surface pattering of Ge-As-Se thin films by electric charge accumulation10.1016/j.tsf.2016.07.073 ↗
21. Electron-Beam Recording of Surface Structures on As-S-Se Chalcogenide Thin Films10.15330/pcss.21.1.146-150 ↗
22. Kinetics of optical reorientation in amorphous GeSe2 films10.1080/13642819108207626 ↗
23. M. S. Iovu, I. A. Vasiliev, D. V. Harea, E. P. Colomeico, Photocurrent relaxation in AsxSe1-x thin films: compositional dependence, J. Optoel. Adv. Mater. 7 (2005) 2317–2322. https://old.joam.inoe.ro/arhiva/pdf7_5/Iovu1.pdf https://link.springer.com/book/10.1007/978-1-4757-0851-6.
24. On the compositional dependence of the optical gap in amorphous semiconducting alloys10.1016/0022-3093(81)90119-8 ↗
25. Optical properties of amorphous As–Se and Ge–As–Se thin films10.1016/S0167-577X(98)00227-4 ↗
26. Electron beam-induced mass transport in As–Se thin films: compositional dependence and glass network topological effects
27. Photoinduced mass transport in Ge-Se amorphous films