Preparation of high-purity chalcogenide glasses containing gallium(III) sulfide
Source abstract
Abstract
A technique for preparation of high-purity Ga-Ge-S and Ga-Sb-S glasses is developed. The method includes two main stages: synthesis of gallium(III) sulfide by interaction of gallium(III) iodide with sulfur in an evacuated silica-glass reactor; synthesis and loading of germanium(II) sulfide and antimony(III) sulfide in the reactor. Thermodynamic modeling of Ge-S and Sb-S systems is carried out. Optimum conditions for the synthesis of germanium and antimony sulfides as components of the chalcogenide charge are theoretically and experimentally determined. High-purity Ga 5Ge 35S 60 and Ga 8Sb 32S 60 glasses with the 0.2–0.6 ppm(at) hydrogen impurity content in the form of SH-groups and heterogeneous micron and submicron-sized impurity inclusions of less than 10 2 pieces/cm 3 are prepared.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Solid-state spectroscopy and crystallography
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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