On the ultimate resolution of As2S3-based inorganic resists
Source abstract
Abstract
Abstract The possibility of making lithographic masks based on As2S3 chalcogenide glass with ultimately small size of resist elements has been investigated. Interference lithography using synchrotron radiation with a wavelength of 13.4 nm, corresponding to extreme ultraviolet light, was used. High-quality masks with elements of 30 nm in size were obtained. In a dynamic light scattering study, resist particles of about 3 nm in size were found in the developer after the development process, which corresponds to the intermediate-range order parameter in the structure of the chalcogenide glass. It is assumed that this grain size determines the ultimate resolution, roughness and unevenness of the edge of the inorganic resist mask.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
Show source-provided references
1. New vitreous semiconductors
2. Bonding bands, lone-pair bands, and impurity states in chalcogenide semiconductors10.1103/PhysRevLett.28.355 ↗
3. The effect of electronegativity difference on the defect chemistry in lone-pair semiconductors10.1080/01418637808226453 ↗
4. See for example A
5. Structural study of amorphous selenium by in situ EXAFS: Observation of photo-induced bond alternation10.1103/PhysRevB.55.726 ↗
6. A dry-etched inorganic resist10.1063/1.90206 ↗
7. Application of As2S3-organic photoresist mask for reactive etching of semiconductors-A(III)B(V)
8. Nanostructuring of chalcogenide glasses using electron beam lithography
9. Comparison of optical and chemical properties of thermally evaporated and spin-coated chalcogenide AsS thin films targeting electron beam lithography applications10.1016/j.jnoncrysol.2018.12.012 ↗
10. Glasses for lithography10.1016/j.jnoncrysol.2006.10.092 ↗
11. Chalcogenide glass thin film resists for grayscale lithography
12. Sub-50 nm period patterns with EUV interference lithography10.1016/S0167-9317(03)00059-5 ↗
13. Optical monitoring of etching in inorganic resists10.1016/0040-6090(78)90163-3 ↗
14. Mechanism for interaction of amine solutions with monolithic glasses and amorphous films in the As-S system
15. Michailov · Dissolution kinetics of glassy arsenic sulfide in alkali and amine · 1994 · 176 · 258
16. Designing intermediate-range order in amorphous materials10.1038/nature01022 ↗
17. Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing10.1126/science.aao3212 ↗
18. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides10.1038/nnano.2012.193 ↗
19. High electron mobility, quantum Hall effect and anomalous optical response in atomically thin InSe10.1038/nnano.2016.242 ↗
20. How 2D semiconductors could extend Moore's law10.1038/d41586-019-00793-8 ↗