Effect of SiO2 surface conditions on the diffusion and interaction of co-implanted In and As atoms

Abstract The diffusivity and interaction of As and In atoms co-implanted in thermally-grown SiO2 films were investigated. It was established that atom profiles and the nanocrystal growth are strongly dependent on the SiO2 surface conditions determining the external oxygen flow into a silicon dioxide film. The reciprocal influence of In and As atoms on their diffusion was obtained, too. In the case of native SiO2 films, the formation of stoichiometric InAs nanocrystals was realized at the depth of In+ ion projective range as the arsenic atom diffusion was activated. In the case of SiO2 films encapsulated with Si3N4 before the annealing, a strong diffusion of In atoms to the depth of As+ ion projective range took place. At that, the formation of amorphous InAs nanoparticles was observed. The microscopic mechanisms of In and As diffusion and the nanocrystal growth are considered within the atom position in the SiO2 network.