Thermodynamic description of Cd Hg1−Te growth process by LPE
Source abstract
Abstract
Abstract The paper presents a thermodynamic analysis of the CdXHg1−XTe growth process through liquid phase epitaxy. The diffusion-limited model has been applied to describe the process. The analysis includes the isothermal LPE kinetics of the solid solution’s layers and the influence of their elastic strains. Good correspondence with experimental data has been achieved in various regimes of time and temperature.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Semiconductor Detectors and Materials · Chalcogenide Semiconductor Thin Films · Thermodynamic and Structural Properties of Metals and Alloys
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References (15)
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1. Tung · J. Vac. Sci. Technol. · 1982 · 21 · 11710.1116/1.571692 ↗
2. Brebrick · J. Cryst. Growth · 1988 · 86 · 3910.1016/0022-0248(90)90696-I ↗
3. Tung · J. Electrochem. Soc. · 1981 · 128 · 45110.1149/1.2127437 ↗
4. Glazov · 1980
5. Moskvin · Semicond. Phys. Quant. Electron. Optoelectron. · 2002 · 5 · 37810.15407/spqeo5.04.378 ↗
6. Moskvin · Semicond. Phys. Quant. Electron. Optoelectron. · 2003 · 6 · 2310.15407/spqeo6.01.023 ↗
7. Jordan · J. Phys. Chem. Solids · 1975 · 36 · 32910.1016/0022-3697(75)90032-3 ↗
8. Moskvin · Zhurn. Fiz. Khim. · 2006 · 80 · 1562
9. Kusnetzov · 1991
10. Small · J. Appl. Phys. · 1979 · 50 · 532210.1063/1.326630 ↗
11. Movlanov · Fiz. Tverd. Tel. (FTT, Russia) · 1962 · N2 · 541
12. Kusnetzov · J. Cryst. Growth · 1984 · 66 · 56210.1016/0022-0248(84)90155-6 ↗
13. Harman · J. Electron. Mater. · 1980 · 9 · 94510.1007/BF02822728 ↗
14. Bowers · IEEE Trans. Electron. Dev. · 1980 · 27 · 2510.1109/T-ED.1980.19813 ↗
15. Wang · IEEE Trans. Electron. Dev. · 1980 · 27 · 15410.1109/T-ED.1980.19834 ↗