Simulation of picosecond domain time-of-flight experiments in a-Si:H

Abstract Using a model, developed earlier, of trap controlled conduction, which includes both the Meyer–Neldel rule and field assisted detrapping, we have simulated picosecond timescale drift mobility and drift velocity measurements in a-Si:H. This model is able to duplicate both the picosecond and nanosecond data, for all values of temperature and field, using one set of fixed parameters. We observe that under certain conditions, the drift mobility is field independent. Coherence between the picosecond and nanosecond results is shown.