Deposition of amorphous fluorosilane thin film on silicon surface: Atomic simulation

Abstract We utilized the Tersoff–Brenner potential form potential to investigate SiF3 continuously bombarding silicon surface with energies of 10, 50 and 100 eV at normal incidence and room temperature by molecular dynamics method. The saturation of deposition yield of F and Si atoms on the surface is observed. A F-containing amorphous layer is formed whose thickness increases with incident energy. In the ejected gas-phase species, F, SiF and SiF2 species increases with increasing incident energy, while the amount of SiF3 species decreases.