Temperature effects on the Si/SiO2 interface defects and suboxide distribution
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
Show source-provided references
1. Cantin · Phys. Rev. B · 1995 · 52 · R1159910.1103/PhysRevB.52.R11599 ↗
2. Cantin · Surf. Sci. · 1996 · 352 · 79310.1016/0039-6028(95)01230-3 ↗
3. J.L. Cantin, M. Schoisswohl, H.J. von Bardeleben, V. Morazzani, J.J. Ganem, I. Trimaille, in: H.Z. Massoud, E.H. Poindexter (Eds.), The Physics and Chemistry of SiO2 and the Si/SiO2 Interface, Proc. vol. 96-1, The Electrochemical Society, 1996, p. 28
4. A. Grosman, C. Ortega, Y.S. Wang, M. Gandais, in: G. Amato, C. Delerue, H.J. von Bardeleben (Eds.), Structural and Optical Properties of Porous Silicon Nanostructures, Optoelectronic Properties of Semiconductors and Superlattices, vol. 5, M.O. Manasreh, Series Editor, Gordon and Breach, London, 1998, p. 317
5. For hν=1254 eV (MgKα), the photoelectron escape depth in the Si bulk is about 2 nm [R. Flitsch, S.I. Raider, J. Vac. Sci. Technol. 12 (1975) 305]10.1116/1.568771 ↗
6. Himpsel · Phys. Rev. B · 1988 · 38 · 608410.1103/PhysRevB.38.6084 ↗
7. F.J. Himpsel, D.A. Lapiano-Smith, J.F. Morar, J. Bevk, in: C.R. Helms, B.E. Deal (Eds.), The Physics and Chemistry of SiO2 and the Si/SiO2 Interface 2, Plenum, New York, 1993
8. Herino · Mater. Lett. · 1984 · 2 · 51910.1016/0167-577X(84)90086-7 ↗
9. Shirley · Phys. Rev. B · 1972 · 5 · 470910.1103/PhysRevB.5.4709 ↗
10. A.H. Edwards, in: C.R. Helms, B.E. Deal (Eds.), Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Plenum, New York, 1988, p. 27110.1007/978-1-4899-0774-5_30 ↗
11. We follow the orthodox interpretation of Himpsel and coworkers (See Ref. [6]). (See also F.R. McFeely, K.Z. Zhan, M.B. Holl, S. Lee, J.E. Bender IV, J. Vac. Sci. Technol. B 14 (4) (1996) 2824, where this assignment is contested)10.1116/1.588840 ↗
12. Grunthaner · Phys. Rev. Lett. · 1979 · 43 · 168310.1103/PhysRevLett.43.1683 ↗
13. Rochet · J. Non-Cryst. Solids · 1997 · 216 · 14810.1016/S0022-3093(97)00181-6 ↗
14. Tao Z.H.L · J. Vac. Sci. Technol. B · 1994 · 12 · 250010.1116/1.587791 ↗
15. Bischoff · Solid State Commun. · 1992 · 83 · 82310.1016/0038-1098(92)90035-8 ↗
16. Dufour · Phys. Rev. B · 1997 · 56 · 426610.1103/PhysRevB.56.4266 ↗
17. Stesman · Phys. Rev. B · 1993 · 48 · 241810.1103/PhysRevB.48.2418 ↗
18. Kobeda · J. Vac. Sci. Technol. B · 1988 · 6 · 57410.1116/1.584402 ↗
19. Time constants for the viscous relaxation process are about 5300 h at 700°C and 12 min at 1000°C (from Ref. [18])