Optical characterization of photosensitive AMTIR-1 chalcogenide thin layers deposited by electron beam deposition
Source abstract
Abstract
Abstract Amorphous Ge33As12Se55 films have been deposited by electron beam physical vapor deposition and their optical properties have been studied using reverse engineering on spectrophotometric measurements. Definition of the different optical constants was made by Tauc-Lorentz model allowing simultaneous characterization in high and low absorption area. Moreover an investigation of the layer's photosensitivity with an exposure wavelength at ~ 808 nm has been carried out and reveals a photo-bleaching effect generating up to 0.04 refractive index variation at 1 μm. Finally the stability of the fabricated layers is studied.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Thin-Film Transistor Technologies
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