journal article·1991

The nature of structural defects and thermal equilibrium effects on doped a-Si:H as elucidated by electron nuclear double resonance measurements

H. Yokomichi, K. Morigaki

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Phase-change materials and chalcogenides · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references
1. Kakalios · 1989 · Vol. A · 207
2. Osaka · J. Ceram. Soc. Jpn. · 1989 · 97 · 685
3. Stutzmann · Phys. Rev. · 1987 · 35 · 973510.1103/PhysRevB.35.9735 ↗
4. Disordered Semiconductors
5. Morigaki · Jpn. J. Appl. Phys. · 1990 · 29 · L136910.1143/JJAP.29.L1369 ↗
6. Yokomichi · Solid State Commun. · 1987 · 61 · 69710.1016/0038-1098(87)90719-8 ↗
7. Watkins · Phys. Rev. · 1964 · 134 · A135910.1103/PhysRev.134.A1359 ↗
8. Morigaki · 1989 · Vol. A · 595
9. Yokomichi · Solid State Commun. · 1987 · 63 · 62910.1016/0038-1098(87)90868-4 ↗
10. Yamasaki · Phys. Rev. Lett. · 1990 · 65 · 75610.1103/PhysRevLett.65.756 ↗