Conduction mechanisms in hydrogenated amorphous silicon carbide
Source abstract
Abstract
Abstract We report on the conduction mechanisms at room temperature of hydrogenated amorphous silicon carbide (a-Si1-xCx:H) films deposited by 13.56 MHz plasma-enhanced chemical vapor deposition (PECVD). By analysing the current-voltage (J-V) characteristic of films with different thicknesses, it was possible to prove that space charge limited current (SCLC) enhanced by the Poole-Frenkel effect is the dominant charge transport mechanism for high electric fields. In addition, films with a variation of the Si–C ratio x (between 0.5 and 0.8) showed that higher Si content decreases the volume trap density. This result was in accordance to an observed decrease of the Urbach energy, indicating less long-range disorder.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Diamond and Carbon-based Materials Research · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (38)
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