MOCVD and characterization of Hf-silicate thin films using HTB and TEMAS

Abstract Hafnium silicate (HfSi x O y ) films were deposited by metal-organic chemical vapor deposition (MOCVD) using a combination of precursors: hafnium tetra- tert -butoxide [Hf(OC(CH 3 ) 3 ) 4 , HTB] and tetrakis-ethylmethylamino silane [Si(N(C 2 H 5 )(CH 3 )) 4 , TEMAS]. The activation energy was independent on the ratio of precursor amounts in the surface reaction regime. The grown films showed Hf-rich characteristics and the impurity concentrations were less than 1 at.% (below detection limits). Hafnium silicate films were amorphous up to 700 °C annealing. Hf/(Hf + Si) composition ratio and dielectric constant ( k ) of the Hf-silicate films decreased by increasing the growth temperature above 270 °C.