Influence of temperature, light intensity and electrical field on the photoinduced dichroism in chalcogenide thin films

Abstract An experimental study of temperature, light intensity, and externally applied electrical fields on photoinduced linear dichroism (PDi) in amorphous As 2 S 3 and As 2 Se 3 films is reported. Light intensity dependence of the saturation of the PDi is observed both at room temperature and at temperatures close to the glass transition temperature. The build-up kinetics of PDi are analyzed as a function of temperature and light intensity. The results show that existing models are only valid to a first approximation. Dark relaxation of PDi is measured, showing effects of the probe beam.