Fluorinated nanoporous SiO2 films with ultra-low dielectric constant

Abstract Fluorinated nanoporous silica (denoted as SiO 2 :F) thin films with low dielectric constant were prepared by a sol–gel method and spin coating technique. The leakage current densities of the SiO 2 :F thin films were 10 −8 and 3 × 10 −6 A/cm 2 respectively for the as-deposited films and for those subjected to annealing at a temperature of 450 °C. These currents are more than one order of magnitude lower than those of the common SiO 2 films. Photoluminescent results showed strong blue-light emission and a small blue shift in the SiO 2 :F films that were related to the increment of the porosity. The dielectric properties were also characterized and the k value of the annealed SiO 2 :F film was found to be about 1.67. The hole size in the films is small and the size distribution is uniform for the annealed SiO 2 :F samples due to the effects of fluorination. The underlying mechanism for fluorination is discussed in this paper.