Atomic structure and short- and medium-range order parameters in amorphous chalcogenide films prepared by different methods

Abstract The atomic structure of amorphous As2Se3 and As2S3 films prepared by thermal evaporation in a vacuum and by RF ion-plasma sputtering has been studied by the methods of X-ray diffraction and Raman spectroscopy. The techniques of film preparation had different conditions of substance vaporization and atom condensation on a substrate. It has been established that films prepared by these methods have significant differences in the dimensions of the medium-range order and in the local atomic structure, which causes considerable differences in their electronic properties.