Correlation between bismuth concentration and distribution of relaxators in As2Se3(Bi) layers
Source abstract
Abstract
Abstract The problem of correlation between bismuth concentration and relaxators spectrum in As 2 Se 3 Bi x layers is under discussion. The composition of two structural units: clusters and glass matrix, experience changes with increasing bismuth concentration. Changes in the ratio between D + and D − defect centers determine the characteristics of the relaxators spectrum in the As 2 Se 3 (Bi) x system: the values of the relaxation time distribution function and the most probable relaxation time τ p .
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography
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References (12)
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