Ion beam synthesis of C-based optically-active nanoclusters in silica

Abstract Carbon nanoclusters formed using ion implantation and thermal annealing are shown to photoluminescence in the visible range. Silica samples were implanted with a fluence of 2 × 10 17 atoms/cm 2 , 70 keV carbon ions and thermally annealed for 4 h at 1100 °C. Photoluminescence measurement made at select intervals during the anneal process show continued growth of the nanoclusters within the silica throughout the process. However, Rutherford backscattering showed a rapid loss of carbon during the initial 15 min of annealing indicating a competition between the growth of the second-phase nanoparticles and the formation of CO, a volatile form of carbon.