Structural characterization of silicon nanocrystals from amorphous silicon oxide materials

Abstract Silicon nanocrystals have been produced by disproportionation reaction of bulk silicon monoxide at temperatures higher than 1073 K. More specific, samples annealed at 1123, 1173, 1223 and 1323 K as well as the starting material SiO have been examined. X-ray diffraction, high-resolution transmission electron microscopy and infrared spectroscopy have been employed in order to investigate the structure of the produced silicon nanocrystals. Photoluminescence measurements reveal a three band emission with maxima positioned at 1.33, 1.52 and 1.67 eV. The intensity of the photoluminescence emission increases with the annealing temperature exponentially. This fact can be directly correlated with the disproportionation reaction which results in bigger amounts of silicon nanocrystals by increasing the annealing temperature and is discussed here. Also a possible explanation is given for the origin of each emission band.