Comparison of photo- and deuteron-induced effects in amorphous chalcogenide layers

Abstract The effect of irradiation on the optical absorption edge and thickness of AsSe and As2S3 thin films has been investigated for different doses of 12H, 11H accelerated to energies of 80 and 180 keV. The kinetics and value of the stimulated changes were compared with photo-induced effects of laser illumination at 0.51 and 0.63 μm. It was observed that the optical band gap decreases and the thickness increases for both cases. The penetration length and depth profile of implanted ions with different energies were calculated and proposed for creating layer structures with depth-profiled optical parameters.