Effect of γ-irradiation on the optical and electrical properties of PbxGe42−xSe48Te10
Source abstract
Abstract
Abstract The composition dependence of optical and electrical of amorphous unirradiated and γ-irradiated thin films of Pb x Ge 42-x Se 48 Te 10 (5 ≤ x ≤ 16) deposited by thermal evaporation was measured as a function of wavelength (0.3 μm ≤ λ ≤ 2.5 μm). The optical transition was found to be indirect. The optical energy gap (E opt ) decreases with increasing concentration of Pb at.wt.% and exhibits a minimum value for the composition with 9 at.wt.% Pb and the results have been interpreted in terms of the average bond energy. The band tail (E c ) obeys Ubarch's empirical relation. The d.c. electrical resistance was measured in a temperature range of (300–455 K). The activation energy for electrical conduction decreased with increasing Pb concentration. The electronic conduction in the temperature range has been attributed to band transport mechanism. The effect of γ-radiation on the optical constants (n, k), band tail (E c ) and E elect energies as a function of composition has been determined. The results show that, the radiation causes increase in optical and electrical energies as γ-doses increase.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (35)
Show source-provided references
1. Carrier type reversal in metal modified chalcogenide glasses: results of thermal transport measurements10.1063/1.1574177 ↗
2. Impurity-induced photoconductivity in gallium-doped Pb1-xGexTe alloys
3. Carrier-type reversal in Pb–Ge–Se glasses: photopyroelectric measurements of thermal conductivity and heat capacity10.1063/1.1345839 ↗
4. Mott · 1979
5. Elliot · 1984
6. Electrical transport in n-type semiconducting Ge20BixSe70−xTe10 glasses10.1016/0022-3093(80)90475-5 ↗
7. Electrical properties of n-type semiconducting chalcogenide glasses in the system Pb–Ge–Se
8. Carrier-type reversal in Pb-modified chalcogenide glasses10.1103/PhysRevB.58.4449 ↗
9. Optical band gap of Pb modified Ge–Se–Te glasses investigated by photoacoustic technique10.1016/j.ceramint.2003.12.147 ↗
10. Microhardness of Pb modified chalcogenide glasses
11. Electrical properties of amorphous Pb–Ge–Se thin films10.3923/jas.2005.1.4 ↗
12. Differential scanning calorimeter studies on Pb modified Ge–Se–Te glasses10.1023/A:1023925706637 ↗
13. Photopyroelectric determination of thermal parameters across p→n transition in Pb doped Ge–Se glasses
14. Carrier-type reversal in Pb–Ge–Se glasses: photopyroelectric measurements of thermal conductivity and heat capacity10.1063/1.1345839 ↗
15. Mixed doping in Ge10Se90−x−ylnxBiy Glasses
16. A consistent approach towards Bi doping mechanism in chalcogenide glasses from Cp measurement in Ge–Se–Te–Bi system10.1016/S0038-1098(00)00340-9 ↗
17. Charge carrier transport mechanism in amorphous layers of the composition PbxGe42−xSe58
18. Transport properties and band structure of non-stoichiometric Cu2−xTe10.1016/0040-6090(94)90483-9 ↗
19. Determination of the thickness and optical constants of amorphous silicon10.1088/0022-3735/16/12/023 ↗
20. Tauc · 1974
21. Bonding bands, lone-pair bands, and impurity states in chalcogenide semiconductors10.1103/PhysRevLett.28.355 ↗
22. Origin of carrier-type reversal in Pb–Ge–Se glasses: a detailed thermal, electrical and structural study10.1021/jp972129+ ↗
23. Chemical bond approach to glass structure10.1016/0022-3093(85)90218-2 ↗
24. Optical defects produced in fused silica during laser-induced breakdown10.1063/1.1573364 ↗
25. n-Type conduction in Pb doped Se–In chalcogenide glasses10.1063/1.365397 ↗
26. Kinetic of crystallization and electrical conductance of Ge5As38Te57 amorphous chalcogenide alloy10.1016/S0921-4526(99)00086-1 ↗
27. Formation of chalcogenide glass p–n junctions10.1063/1.96820 ↗
28. p–n junctions from sputtered Ge25Se75−xBix10.1063/1.343542 ↗
29. Sanderson · 1976
30. Chemical bond approach to determining conductivity band gaps in amorphous chalcogenides and pnictides10.1016/0038-1098(81)90209-X ↗
31. Electrical and optical studies on Pb-modified amorphous Ge–Se–Te films
32. Small polaron conduction in V2O5–P2O5 glasses10.1016/0022-3093(73)90089-6 ↗
33. Experimental evidence for negative correlation energy and valence alternation in amorphous selenium10.1103/PhysRevB.56.R485 ↗
34. Feltz · 1993 · 275
35. Constraint theory and carrier type reversal in Bi–Ge chalcogenide glasses10.1103/PhysRevB.36.4265 ↗