journal article·1999-04Open access

Stress induced leakage currents in N-MOSFETs submitted to channel hot carrier injections

D Goguenheim, A Bravaix, D Vuillaume, F Mondon, M Jourdain, A Meinertzhagen

Journal of Non-Crystalline Solids· Volume 245· Issue 1-3
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Abstract

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Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Ferroelectric and Negative Capacitance Devices

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References (11)

Show source-provided references
1. C. Hu, Proceedings of IEDM'96, 1996, p. 31910.1177/109114219602400302 ↗
2. Maserjian · J. Appl. Phys. · 1982 · 53 · 55910.1063/1.329919 ↗
3. D. Goguenheim, A. Bravaix, D. Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen, Proceedings of INFOS'97, Microelectron. Eng. 36 (1997) 14110.1016/S0167-9317(97)00035-X ↗
4. A. Teramoto, K. Kobayashi, Y. Matsui, M. Hiramaya, A. Yasukoa, Proceedings of IRPS', 1996, pp. 11310.1109/RELPHY.1996.492069 ↗
5. Matsukawa · IEEE Trans. Electron Devices · 1996 · 43 · 192410.1109/16.543028 ↗
6. Chen · IEEE Trans. Electron Devices · 1993 · 40 · 18710.1109/16.249443 ↗
7. Dumin · IEEE Trans. Electron Devices · 1993 · 40 · 98610.1109/16.210209 ↗
8. S.M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981, 403
9. Vuillaume · IEEE Trans. Electron Devices · 1993 · 40 · 77310.1109/16.202790 ↗
10. J. De Blauwe, R. Degraeve, R. Bellens, J. Van Houdt, Ph. Roussel, G. Groeseneken, H.E. Maes, Proceedings of ESSDERC, 1996, pp. 361
11. Di Maria · Appl. Phys. Lett. · 1996 · 68 · 300410.1063/1.116678 ↗