Distribution of electronic states in amorphous Cd–As thin films on the basis of optical measurements

Amorphous Cd-As thin films were prepared by thermal evaporation of bulk polycrystalline material of Cd3As2 or CdAs2 compositions. The simple models of electronic structure for amorphous Cd-As films were studied. The distribution of extended and localized states and optical transitions in amorphous materials, depending on the film composition was also shown. The transmission and reflectivity spectra of as-prepared amorphous Cd-As (a-Cd-As) thin films used to calculate the absorption coefficient, α against the photon energy E were also studied.