Threshold restoration effects in γ-irradiated chalcogenide glasses

The influence of annealing temperature T a on the optical absorption edge in the previously γ-irradiated glasses of Ge-Sb(As)-S ternaries of pseudobinary 'stoichiometric' Sb(As) 2 S 3 -GeS 2 and non-stoichiometric Sb(As) 2 S 3 -Ge 2 S 3 cut-sections is studied. It is established that the post-irradiation thermally produced changes of the optical absorption edge differ in various T a regions. Threshold restoration effects are found beginning from some intermediate onset temperature T on for all investigated glasses. Compositional features of the apparent activation energies determined in corresponding T a regions are analyzed. A possible mechanism for the observed effects is discussed.