Reduction of defects by high temperature annealing (150°C–240°C) in hydrogenated amorphous silicon films deposited at room temperature
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Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (8)
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7. Jackson · Phys. Rev. B · 1988 · 37 · 102010.1103/PhysRevB.37.1020 ↗
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