Catalyzed-assisted growth of well-aligned silicon oxide nanowires

Abstract Bulk quantity and ultra-long silicon oxide nanowires on micrometer-sized solid tin balls have been synthesized by typical chemical vapor deposition via a vapor–liquid–solid process. Low melting point tin droplets can be used as an effective catalyst for the large-scale growth of highly aligned silicon oxide nanowires. Observations using scanning electron microscopy indicate that numerous nanowires simultaneously nucleate, grow at nearly the same rate, and simultaneously stop growing. The silicon oxide nanowires have a uniform diameter distribution about 60 nm and are well-aligned. A model for the growth of silicon oxide nanowires on the surface of the tin balls was proposed. The Sn balls on the substrate come from the thermal evaporating SnCl2 powders, and one of the reactants, Si, on the surface of a Sn ball come from the silicon wafer. Silicon reacts with oxygen to form silicon oxide nanowires on the surface of a liquid Sn ball.