Transport properties of amorphous Si1−xAux: Metal-insulator transition and

journal article·1983-12

N. Nishida, T. Furubayashi, M. Yamaguchi, M. Shinohara, Y. Miura, Y. Takano, K. Morigaki, H. Ishimoto, K. Ono

Bibliographic record

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

OpenAlex topics: Semiconductor materials and interfaces · Theoretical and Computational Physics · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Show source-provided references

1. Rosenbaum · Phys. Rev. Lett · 1980 · 45 · 172310.1103/PhysRevLett.45.1723 ↗

2. Thomas · Phys. Rev. · 1982 · B25 · 428810.1103/PhysRevB.25.4288 ↗

3. Dodson · Phys. Rev. Lett. · 1981 · 46 · 4610.1103/PhysRevLett.46.46 ↗

4. Nishida · Solid State Communications · 1982 · 44 · 30510.1016/0038-1098(82)90455-0 ↗

5. Hertel · Phys. Rev. Lett. · 1983 · 50 · 74310.1103/PhysRevLett.50.743 ↗

6. Kaveh · J. Phys. · 1982 · C5 · L697

7. McMillan · Phys. Rev. · 1981 · B24 · 273910.1103/PhysRevB.24.2739 ↗

8. Dynes · Phys. Rev. Lett. · 1981 · 46 · 13710.1103/PhysRevLett.46.137 ↗

9. Fukuyama · J. Phys. Soc. Jpn. · 1982 · 51 · 110510.1143/JPSJ.51.1105 ↗

10. Maekawa · J. Phys. Soc. Jpn. · 1983 · 5210.1143/JPSJ.52.1352 ↗