Model of the light-induced creation of two types of dangling bonds in a-Si:H
Source abstract
Abstract
We present a new model of the light-induced creation of two types of dangling bonds in a-Si:H. The numerical calculation on the rate equation based on the model accounts for differences in the presence of two types of dangling bonds between high-quality samples and low-quality samples and also the observed kinetics of light-induced dangling bond densities in a-Si:H.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
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References (17)
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