journal article·1983-12

Valence band structure of hydrogenated amorphous silicon-carbon alloys

Yoshifumi Katayama, Toshikazu Shimada, Tsuyoshi Uda, Keisuke L.I. Kobayashi, Chang-gen Jiang, Hiroshi Daimon, Yoshitada Murata

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: High-pressure geophysics and materials · Physics of Superconductivity and Magnetism · Chemical and Physical Properties of Materials

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References (5)

Show source-provided references
1. Tawada · Appl. Phys. Lett. · 1981 · 39 · 23710.1063/1.92692 ↗
2. Amorphous Semiconductor Technology and Devices 1982
3. Katayama · 1983 · 117 & 118 B+C · 947
4. Cavell · Phys. Rev. · 1973 · B7 · 531310.1103/PhysRevB.7.5313 ↗
5. Bock · J. Am. Chem. Soc. · 1979 · 79 · 766710.1021/ja00520a006 ↗