journal article·2002-04

Low-temperature fabrication of microcrystalline silicon and its application to solar cells

Michio Kondo, Yasuyuki Nasuno, Hiroshi Mase, Takehito Wada, Akihisa Matsuda

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Abstract

Low-temperature fabrication process for microcrystalline silicon solar cells has been developed using a plasma enhanced chemical vapor deposition (PECVD) technique. The advantage of the low-temperature process is: (i) better crystallinity of B-doped films for the p-layer and (ii) intrinsic nature of undoped films for the i-layer. These phenomena are explained in terms of the beneficial role of hydrogen. This low-temperature process was used to fabricate the microcrystalline silicon solar cells on a glass/ZnO substrate at 140 °C and on a plastic substrates at 100 °C. Their efficiencies were 9.4% and 5.9%, respectively.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (13)

Show source-provided references
1. Meier · Proc. Mater. Res. Soc. Symp. · 1996 · 420 · 310.1557/PROC-420-3 ↗
2. Bergmann · Appl. Phys. A · 1999 · 69 · 15510.1007/s003390050989 ↗
3. Yamamoto · Proc. Mater. Res. Soc. Symp. · 1998 · 507 · 13110.1557/PROC-507-131 ↗
4. Matsuda · J. Non-Cryst. Solids · 1983 · 59&60 · 76710.1016/0022-3093(83)90284-3 ↗
5. Perrin · Surf. Sci. · 1989 · 210 · 11410.1016/0039-6028(89)90106-4 ↗
6. J. Werner, Thin Sold Films 383 (2001) 9510.1016/S0040-6090(00)01788-0 ↗
7. Keppner · Appl. Phys. A. · 1999 · 69 · 15510.1007/s003390050987 ↗
8. Kamei · Jpn. J. Appl. Phys. · 1998 · 37 · L26510.1143/JJAP.37.L265 ↗
9. Kondo · J. Non-Cryst. Solids · 2000 · 266–269 · 8410.1016/S0022-3093(99)00744-9 ↗
10. Nasuno · Jpn. J. Appl. Phys. · 2001 · 40 · L30310.1143/JJAP.40.L303 ↗
11. Sameshima · Jpn. J. Appl. Phys. · 1999 · 38 · 182910.1143/JJAP.38.1829 ↗
12. T. Ohe et al., to be published
13. Stavola · Phys. Rev. B · 1988 · 37 · 831310.1103/PhysRevB.37.8313 ↗