journal article·1987-12

Quantitative infrared characterization of plasma enhanced CVD silicon oxynitride films

J.C. Rostaing, Y. Cros, S.C. Gujrathi, S. Poulain

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and devices · Silicon Carbide Semiconductor Technologies · Thin-Film Transistor Technologies

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References (7)

Show source-provided references
1. 1986 · 77
2. Cros · J. Appl. Phys. · 1987
3. Cros · 1987 · 90 · 287
4. The Physics and Technology of amorphous SiO2
5. S.C. Gujrathi, S. Poulain, Y. Cros, J.C. Rostaing To be published.
6. Groleau · Nucl. Instrum. Methods · 1983 · 218 · 1110.1016/0167-5087(83)90946-8 ↗
7. Denise · J. Appl. Phys. · 1986 · 60 · 253610.1063/1.337117 ↗