Increased medium-range order in amorphous silicon with increased substrate temperature
Source abstract
Abstract
Using fluctuation electron microscopy, we have measured the medium-range order of magnetron sputtered silicon thin films as a function of substrate temperature from the amorphous to polycrystalline regimes. We find a smooth increase in the medium-range order of the samples, which we interpret in the context of the paracrystalline structural model as an increase in the size of and/or volume fraction occupied by the paracrystalline grains. These data are counter to the long-standing belief that there is a sharp transition between amorphous and polycrystalline structures as a function of substrate temperature.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Phase-change materials and chalcogenides · Silicon Nanostructures and Photoluminescence
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References (15)
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