Growth of large-grain poly-Si by FE-SMC

Abstract Ni-silicide mediated crystallization (SMC) of amorphous silicon (a-Si) by UV annealing has been studied using a 2.5×10 13 cm −2 Ni density on a-Si. The grain size depends on the average Ni area density on a-Si. A-Si having an ultra thin Ni layer (average Ni area density: 2.5×10 13 cm −2 ) was crystallized in an electric field at a temperature of 500 °C. The a-Si is completely crystallized in 10 min without having an amorphous phase and the grain size is ∼20 μm . The needlelike crystallites grow from a precursor crystalline structure sequentially without leaving any remaining a-Si.