Sub-gap excitation effects in As2S3 glass
Source abstract
Abstract
Abstract The mechanism of photoexpansion (PE) has been studied in conjunction with photoconduction (PC) and photoluminescence (PL) characteristics for As2S3 glass. In spectrum-intensity dependence measured at room temperature the PE resembles the PC, while the PE shows a similar temperature dependence to that of the PL. These features are discussed in relation to the band-tail structure in chalcogenide glasses and we suggest that electron–hole pairs are responsible for the PE.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies
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References (12)
Show source-provided references
1. Morigaki · 1999
2. Fritzsche, in: P. Boolchand (Ed.), Insulating and Semiconductor Glasses, World Scientific, Singapore, 1999, Chapter 910.1142/9789812813619 ↗
3. Tanaka · Appl. Phys. Lett. · 1998 · 73 · 343510.1063/1.122789 ↗
4. Tanaka · Philos. Mag. Lett. · 1999 · 79 · 2510.1080/095008399177624 ↗
5. Toyosawa · Phys. Rev. B · 1997 · 56 · 741610.1103/PhysRevB.56.7416 ↗
6. K. Tanaka, S. Nakayama, Jpn. J. Appl. Phys. 38 (1999) 398610.1143/JJAP.38.3986 ↗
7. Tanaka · Phys. Rev. B · 1998 · 57 · 516310.1103/PhysRevB.57.5163 ↗
8. Tanaka · Phys. Rev. B · 1984 · 30 · 454910.1103/PhysRevB.30.4549 ↗
9. Indutnyi · J. Non-Cryst. Solids · 1998 · 227–230 · 70010.1016/S0022-3093(98)00149-5 ↗
10. Ganjoo · Appl. Phys. Lett. · 1999 · 74 · 211910.1063/1.123775 ↗
11. Cargill III · Phys. Rev. B · 1992 · 46 · 1007810.1103/PhysRevB.46.10078 ↗
12. Suchocki · Appl. Phys. Lett. · 1997 · 71 · 155210.1063/1.119963 ↗