journal article·2002-04

Thin-film electroluminescence device utilizing ZnS:Mn nanocrystals as emission layer

Toshihiko Toyama, Daisuke Adachi, Masako Fujii, Yoshitsugu Nakano, Hiroaki Okamoto

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Abstract

Abstract Luminescence properties of impurity-doped ZnS nanocrystals have been investigated for their application to a thin-film electroluminescence (TFEL) device as an emission layer. Two impurity-doped series with different emission mechanisms have been examined, i.e., Mn-doped ZnS nanocrystals for orange emission due to Mn 2+ 4 T 1 ( 4 G )– 6 A 1 ( 6 S ) transitions and Ag and Al co-doped ZnS nanocrystals for blue emission due to Al Zn + donor – Ag Zn − acceptor pair recombinations. Regarding photoluminescence (PL), with a reduction of the crystal size, PL efficiencies of the orange and blue bands increase. On the other hand, EL is observed only from ac-driven TFEL devices with ZnS:Mn nanocrystals.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (10)

Show source-provided references
1. Yoffe · Adv. Phys. · 1993 · 42 · 17310.1080/00018739300101484 ↗
2. Bhargava · Phys. Rev. Lett. · 1994 · 72 · 41610.1103/PhysRevLett.72.416 ↗
3. Ono · 1995 · 3
4. Bol · Phys. Rev. B · 1998 · 24 · 1599710.1103/PhysRevB.58.R15997 ↗
5. Adachi · Appl. Phys. Lett. · 2000 · 77 · 130110.1063/1.1290274 ↗
6. Toyama · Mater. Res. Soc., Symp. Proc. · 2001 · 621 · Q4.4.110.1557/PROC-621-Q4.4.1 ↗
7. Era · J. Phys. Chem. Solids · 1968 · 29 · 182710.1016/0022-3697(68)90167-4 ↗
8. Marrello · IEEE Trans. Electron Devices · 1980 · 27 · 176710.1109/T-ED.1980.20100 ↗
9. Aven · 1967 · 471
10. Tanabe · J. Phys. Soc. Jpn. · 1954 · 9 · 75310.1143/JPSJ.9.753 ↗