journal article·1983-12

Memory switching in amorphous silicon devices

A.E. Owen, P.G. Le Comber, W.E. Spear, J. Hajto

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Thin-Film Transistor Technologies · Advanced Memory and Neural Computing

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References (11)

Show source-provided references
1. Ovshinsky · Phys. Rev. Lett. · 1968 · 21 · 145010.1103/PhysRevLett.21.1450 ↗
2. Owen · IEEE Trans. · 1973 · ED-20 · 10510.1109/T-ED.1973.17617 ↗
3. Adler · Rev. Mod. Phys. · 1978 · 50 · 20910.1103/RevModPhys.50.209 ↗
4. Owen · J. Non-Cryst. Sol. · 1979 · 32 · 2910.1016/0022-3093(79)90063-2 ↗
5. Feldman · J. Non-Cryst. Sol. · 1970 · 2 · 8210.1016/0022-3093(70)90123-7 ↗
6. Dey · J. Vac. Sci. and Technol. · 1979 · 16 · 24010.1116/1.569918 ↗
7. Dey · J. Vac. Sci. and Technol. · 1980 · 17 · 44510.1116/1.570478 ↗
8. Gabriel · J. Non-Cryst. Sol. · 1982 · 48 · 29710.1016/0022-3093(82)90167-3 ↗
9. den Boer · Appl. Phys. Lett. · 1982 · 40 · 81210.1063/1.93269 ↗
10. Owen · 1982 · 129 · 51
11. Spear · Adv. in Phys. · 1977 · 26 · 81110.1080/00018737700101463 ↗