Microscopic origin of the light-induced defects in hydrogenated nitrogen-rich amorphous silicon nitride films
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Semiconductor materials and devices
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References (17)
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1. Kumeda · Jpn. J. Appl. Phys. · 1984 · 23 · L50210.1143/JJAP.23.L502 ↗
2. Lowe · J. Appl. Phys. · 1986 · 59 · 125110.1063/1.336513 ↗
3. Krick · Appl. Phys. Lett. · 1987 · 51 · 60810.1063/1.98362 ↗
4. Chaussat · Physica B · 1985 · 129 · 21510.1016/0378-4363(85)90572-8 ↗
5. Morimoto · Jpn. J. Appl. Phys. · 1985 · 24 · 139410.1143/JJAP.24.1394 ↗
6. Jousse · Appl. Phys. Lett. · 1989 · 55 · 111210.1063/1.101673 ↗
7. Crowder · Appl. Phys. Lett. · 1990 · 57 · 199510.1063/1.104151 ↗
8. P.M. Lenahan, S.E. Curry, D.T. Krick, W.L. Warren and J. Kanicki, Silicon Dangling Bond Centers in Amorphous Silicon Nitride, this volume.
9. Kanicki · Appl. Phys. Lett. · 1990 · 57 · 69810.1063/1.104255 ↗
10. Seager · Appl. Phys. Lett. · 1990 · 57 · 137810.1063/1.104089 ↗
11. Lenahan · Appl. Surf. Sci. · 1989 · 39 · 39210.1016/0169-4332(89)90456-X ↗
12. Warren · Appl. Phys. Lett. · 1991
13. Curry · Appl. Phys. Lett. · 1990 · 56 · 135910.1063/1.102514 ↗
14. W.L. Warren, J. Kanicki and E.H. Poindexter, IEEE Trans. Elec. Dev. Lett. (submitted).
15. Kanicki · 1990 · 192 · 731
16. Warren · Phys. Rev. Lett. · 1990 · 65 · 20710.1103/PhysRevLett.65.207 ↗
17. Warren · J. Appl. Phys. · 1991 · 70