journal article·1985-12

The switching mechanism in amorphous silicon junctions

P.G. Lecomber, A.E. Owen, W.E. Spear, J. Hajto, A.J. Snell, W.K. Choi, M.J. Rose, S. Reynolds

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Thin-Film Transistor Technologies · Advanced Memory and Neural Computing

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References (15)

Show source-provided references
1. Ovshinsky · Phys. Rev. Lett. · 1968 · 21 · 145010.1103/PhysRevLett.21.1450 ↗
2. Owen · IEEE Trans. · 1973 · ED-20 · 10510.1109/T-ED.1973.17617 ↗
3. Gabriel · J. Non-Crystal. Sol. · 1982 · 48 · 29710.1016/0022-3093(82)90167-3 ↗
4. Owen · 1982 · 129 · 51
5. Owen · J. Non-Crystal. Sol. · 1983 · 59 and 60 · 127310.1016/0022-3093(83)90398-8 ↗
6. LeComber · 1984 · Vol. 21D · 275
7. S. Gangopadhyay, J. Geiger, B. Schröder, H. Rübel and S. Iselborn, in print.
8. Putley · 1960
9. Buxo · Revue de Physique Appl. · 1978 · 13 · 76710.1051/rphysap:019780013012076700 ↗
10. Barnett · 1970 · Vol. 6 · 141
11. Abeles · Adv. Phys. · 1975 · 24 · 40710.1080/00018737500101431 ↗
12. Owen · J. Non-Crystal. Sol. · 1979 · 32 · 2910.1016/0022-3093(79)90063-2 ↗
13. Simmons · Radio and Electronic Engineer · 1978 · 48 · 21510.1049/ree.1978.0031 ↗
14. Rose · 1978
15. D'Amico · 1984 · Vol. 21D · 209