Acoustical emission and fractoluminescence from the Ar+-implanted fused SiO2
Source abstract
Abstract
Abstract Chemically inert 40 keV Ar+ ions were implanted into fused SiO2 with doses in the range of 1×1014 to 1×1016 ion/cm2. The implanted specimens were subjected to the localized impact damaging by a pointed striker. The acoustic emission method was applied to assess the dependence of the microcracking process on the implantation dose. The fractoluminescence method showed the generation of non-bridged oxygen hole centers (NBOHC) [ Si–O–] in newly formed microcracks. The performed experiments revealed a critical fluence, which affected in a non-linear manner the fractoluminescent activity due to changes in the mechanical properties of the Ar+-treated surface layer. An interplay between random and correlated damage accumulation at various structural levels was demonstrated.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Ultrasonics and Acoustic Wave Propagation
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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