Analysis of plasma etching reactivity of bismuth aluminosilicate glasses using fluorine concentration
Source abstract
Abstract
Al 2O 3 was replaced with AlF 3 in the composition of bismuth aluminosilicate glasses, and the resistance of the resulting glasses to CF 4/Ar/O 2 plasma was tested. The results were interpreted from the standpoint of glass structure. The resistance to plasma etching increased as the F concentration in the glass increased. After etching, all samples retained a smooth surface structure, and no craters or reactive structures were detected in the microstructure. The formation of Al-F bonds in the glass was confirmed by nuclear magnetic resonance spectroscopy. The increase in plasma resistance at higher F concentrations suggests that the fluorine bonds in the glass structure are involved in decreasing the etching rate. This is possibly due to the higher sublimation temperature of AlF x, which retards the fluorocarbon plasma reaction.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Glass properties and applications · Semiconductor materials and devices · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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