Broad emission in Bi-doped GeGaSe chalcogenide glass and glass-ceramic
Source abstract
Abstract
Bi-doped Ge 23.5Ga 11.8Se 64.7 glasses were prepared, and compositional dependence of broadband near-infrared photoluminescence at 1.26 μm was investigated. The maximum intensity of the emission appeared at 0.3 mol% Bi doped glasses. The glass was further annealed to create glass-ceramics, and their photoluminescence intensity was found to decrease as the heat treatment time increases. The broadband infrared photoluminescence of Bi ions in the glasses is mainly due to the low valence state of Bi, and broad emission from a half-width at full maximum up to 550 nm demonstrates potential applications of the glasses and glass-ceramics in new broadband fiber lasers and optical amplifiers.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Luminescence Properties of Advanced Materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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