Short-range order and charge transport in silicon-rich pyrolytic silicon oxynitride
Source abstract
Abstract
Amorphous SiO xN y films were grown by pyrolysis in a reduced pressure reactor at T = 800 °C for different SiH 2Cl 2/NH 3 ratios from 1/5 to 1/1. The resulting analysis for the photoelectron spectra showed that, in addition to silicon and nitrogen, the samples composition includes oxygen, apparently, due to the presence of residual traces of oxygen and/or water. The red shift of the fundamental absorption edge indicates the presence of Si-Si bonds in SiO xN y. In a wide range of electric fields and temperatures, the charge transport mechanisms in SiO xN y are experimentally studied. The experimental results are compared with the calculation based on different trap ionization models. The best agreement between the experiment and calculation was obtained using the model of phonon-assisted tunneling between neighboring traps. The increase in the SiO xN y leakage current, when changing the SiH 2Cl 2/NH 3 ratio from 1/5 to 1/1, is explained by the trap concentration increase.
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Research context
OpenAlex topics: Semiconductor materials and devices · Silicon Nanostructures and Photoluminescence · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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