Optical properties of material compositions in hydrogenated amorphous silicon through the degree of passivation
Source abstract
Abstract
Abstract This work manages the use of both the bending vibration modes gave by IR examinations and ellipsometric information to perceive the optical behavior of dynamic setups of hydrogenated amorphous silicon thin films arranged by RF-PECVD process. An uncommon accentuation is put because of the hydrogenation stream in amorphous silicon on the idea of shaped locales. The outcomes especially show the development of three kinds of locales with different sizes: sites with just dangling bonds, totally passivated locales just as partially passivated hydrogen sites, the last show an optical behavior in the visible range contingent upon the level of passivation.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies · CCD and CMOS Imaging Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (20)
Show source-provided references
1. Street · 2005
2. Defect dynamics and the Staebler-Wronski effect in hydrogenated amorphous silicon10.1103/PhysRevB.36.3479 ↗
3. Density of glow discharge amorphous silicon films determined by spectroscopic ellipsometry10.1063/1.357267 ↗
4. Effect of the hydrogen bonding and content on the opto-electronic properties of radiofrequency magnetron sputtered hydrogenated amorphous silicon films10.1016/S0038-1098(01)00350-7 ↗
5. Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputtering10.1103/PhysRevB.16.3556 ↗
6. Hydrogen microstructure in hydrogenated amorphous silicon10.1103/PhysRevB.54.17759 ↗
7. Hydrogen microstructure in amorphous hydrogenated silicon10.1103/PhysRevB.36.3259 ↗
8. Infrared analysis of the bulk silicon-hydrogen bonds as an optimization tool for high-rate deposition of microcrystalline silicon solar cells10.1063/1.2837536 ↗
9. Hydrogenated amorphous silicon films deposited by electron cyclotron resonance chemical vapor deposition at room temperature with different radio frequency chuck powers10.1016/j.tsf.2019.137534 ↗
10. Amorphous and heterogeneous silicon thin films
11. Influence of hydrogen-bonding configurations on the physical properties of hydrogenated amorphous silicon10.1103/PhysRevB.50.18046 ↗
12. Optical dielectric function of hydrogenated amorphous silicon: Tetrahedron model and experimental results10.1103/PhysRevB.38.10623 ↗
13. Relation of the Si H stretching frequency to the nanostructural Si H bulk environment10.1103/PhysRevB.76.073202 ↗
14. Disorder and the optical-absorption edge of hydrogenated amorphous silicon10.1103/PhysRevLett.47.1480 ↗
15. Structural disorder and optical gap fluctuations in amorphous silicon10.1088/0953-8984/3/49/005 ↗
16. Optical absorption edge of hydrogenated amorphous silicon studied by photoacoustic spectroscopy10.1080/13642818708211226 ↗
17. Correlation between the optical bandgap and the monohydride bond density of hydrogenated amorphous silicon
18. Mechanism of hydrogen-induced crystallization of amorphous silicon10.1038/nature00866 ↗
19. Enhancement of c-Si surface passivation quality by increasing in situ H2 flow rate10.1016/j.matlet.2015.08.096 ↗
20. Morphology and number density of voids in hydrogenated amorphous silicon: an ab initio study10.1103/PhysRevApplied.7.024013 ↗