AMPS-1D simulation studies of electronic transport in n+-μc-Si:H thin films

Abstract To study the electronic transport in highly n-doped microcrystalline silicon (n + -μc-Si:H) thin films, grain-boundary trapping model is implemented in AMPS (analysis of microelectronic and photonic structure)-1D. This approach is based on the traditional thermionic-emission model and considering the electronic transport parallel to the substrate. In spite of its simplicity, the model leads to the simulated values of activation energy, free carrier concentration, interface trap charge density and mobility which are in good agreement with the referred Hall effect measurement results for electron cyclotron resonance-chemical vapor deposited (ECR-CVD) highly n-doped μc-Si:H thin films.