Structural and chemical changes in Ga doped Ge S glassy alloy
Source abstract
Abstract
Abstract Structural changes developed in Ge S glassy alloy with incorporation of Ga have been investigated using vibrational spectroscopy. Thermal evaporation technique has been employed to deposit thin films of Ge20S80−xGax glassy alloy. Structural transformations in bulk and thin films have been examined from Raman and FTIR spectra recorded at room temperature. Observed left shift in the Raman spectra and right shift in the IR spectra are consequence of increase in reduced mass of the alloy. Ga occupy the Ge sites, due to atomic similarity, and results in the formation of Ge(Ga)S4 tetrahedra units and S3Ge(Ga)-(Ga)GeS3 ethane like structures. Broadening of IR and Raman bands with Ga concentration reveals the conception of Ga S bonds. Chemical changes developed in the Ge-S-Ga glass have been correlated with XPS (X-ray photoelectron spectroscopy) chemical shift. X-ray photoelectron spectroscopy analyses reveal the existence of metal-metal and S S bonds in violation to the chemical ordered network model.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Phase-change materials and chalcogenides · Glass properties and applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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