Structural relaxation on growing surface during network formation of a-Si:H and a-SiGex:H by chemical annealing
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OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Silicon and Solar Cell Technologies
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References (13)
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1. Das · Jpn. J. Appl. Phys. · 1991 · 30 · L23910.1143/JJAP.30.L239 ↗
2. Shirai · 1990 · 59
3. Shirai · Jpn. J. Appl. Phys. · 1991 · 30 · L88110.1143/JJAP.30.L881 ↗
4. Shirai · 1991
5. Perrin · Appl.Phys.Lett. · 1987 · 50 · 43310.1063/1.98165 ↗
6. Mayer · Z.Tech.Phys. · 1937 · 12 · 388
7. Paul · 1991
8. Tanaka · Mat. Sci. Rep. · 1987 · 2 · 13910.1016/S0920-2307(87)80003-8 ↗
9. Knights · Appl.Phys.Lett. · 1981 · 38 · 33110.1063/1.92359 ↗
10. Perrin · Jpn. J. Appl.Phys. · 1989 · 28 · 510.1143/JJAP.28.5 ↗
11. Sasaki · J.Noncryst. Solid. · 1989 · 114 · 67210.1016/0022-3093(89)90686-8 ↗
12. N.Blayo and B.Drevillon, Appl.Phys.Lett., in press
13. Matsuda · Jpn.J.Appl.Phys. · 1986 · 25 · L5410.1143/JJAP.25.L54 ↗