journal article·2003-10

Near-IR absorption of Ga:La:S and Ga:La:S:O glasses by free-electron laser-based laser calorimetry

M.N. Petrovich, A. Favre, D.W. Hewak, H.N. Rutt, A.C. Grippo, J.F. Gubeli, K.C. Jordan, G.R. Neil, M.D. Shinn

Publisher page

Abstract

The optical absorption of bulk Ga:La:S and Ga:La:S:O glasses in the near infrared was investigated by laser calorimetry using the free-electron laser source at the Thomas Jefferson National Accelerator Facility. An absorption coefficient of 1.2 × 10-2 and 2.3 × 10-2 cm-1 was measured at 1.55µm for Ga:La:S and Ga:La:S:O respectively. Comparing this result with conventional transmission measurements, we show that absorption is the prevailing loss mechanism in the near-IR region. Although not conclusive, our measurements suggest that the absorption is due to impurities and to the weak absorption tail.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Glass properties and applications · Phase-change materials and chalcogenides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (8)

Show source-provided references
1. Hewak · IEEE Photon. Technol. Lett. · 1994 · 6 · 60910.1109/68.285556 ↗
2. Hewak · Electron. Lett. · 1996 · 32 · 38410.1049/el:19960199 ↗
3. West · Fiber Integrated Opt. · 2000 · 19 · 22910.1080/01468030050058802 ↗
4. Kang · J. Opt. Soc. Am. B · 1995 · 12 · 205310.1364/JOSAB.12.002053 ↗
5. Brady · J. Non-Cryst. Solids · 1998 · 242 · 9210.1016/S0022-3093(98)00801-1 ↗
6. Wood · Phys. Rev. B · 1972 · 5 · 314410.1103/PhysRevB.5.3144 ↗
7. Willamowski · SPIE Proc. · 1996 · 2870 · 48310.1117/12.259934 ↗
8. Neil · Phys. Rev. Lett. · 2000 · 84 · 66210.1103/PhysRevLett.84.662 ↗