Electric field-controlled sign of the capacitance in metal–carbon nitride–metal devices
Source abstract
Abstract
Abstract Frequency and temperature dependent capacitance measurements were performed on metal–amorphous carbon nitride–metal sandwich structures. Negative capacitance effects occur under high electric field conditions for both polarities of the applied voltage. This low frequency behavior is shown to be incompatible with parasitic inductance effects. The dependence of negative apparent capacitance on frequency and temperature is discussed in the framework of field-assisted hopping transitions between localized states.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Diamond and Carbon-based Materials Research
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References (17)
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