journal article·2010-05

Blue organic light-emitting diodes with low driving voltage and enhanced power efficiency based on MoO3 as hole injection layer and optimized charge balance

Khizar-ul-Haq, M.A. Khan, X.W. Zhang, Liang Zhang, X.Y. Jiang, Z.L. Zhang

Journal of Non-Crystalline Solids· Volume 356· Issue 20-22
Publisher page

Abstract

Abstract In this letter, blue organic light-emitting diodes (OLEDs) with a different hole injection layer (MoO 3 or m-MTDATA), and a different electron transport layer (Alq 3 or BPhen) have been investigated. With 9,10-bis(2-naphthyl)-2-t-butylanthracene (TBADN) doped with (3 wt.%) P-bis(P-N,N-diphenyl-aminostyryl)benzene (DSA-Ph) as an emitting layer, the typical device structure is ITO/HIL (5 nm)/NPB (25 nm)/EML (35 nm)/ETL (15 nm)/LiF (0.8 nm)/Al (100 nm). It has been found that MoO 3 //BPhen based device shows the lowest driving voltage and highest power efficiency among the referenced devices. At the current density of 20 mA/cm 2 , its driving voltage and power efficiency is 5.2 V and 4.2 lm/W, which is independently reduced 48% and improved 44% compared with those of the m-MTDATA//Alq 3 based one, respectively. The energy level diagram of the devices and single-carrier devices are studied to explain the reasons behind this improvement. The results strongly indicate that carrier injection ability and balance shows significant affects on the performance of OLED.
Source: openaire · Quality: candidate unverified · Source record ↗

Research context

OpenAlex topics: Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics · Conducting polymers and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (19)

Show source-provided references
1. Tang · Appl. Phys. Lett. · 1987 · 51 · 91310.1063/1.98799 ↗
2. Lee · J. Korean Phys. Soc. · 2006 · 49 · 1052
3. He · Appl. Phys. Lett. · 2004 · 85 · 391110.1063/1.1812378 ↗
4. Meerheim · Appl. Phys. Lett. · 2006 · 89 · 06111110.1063/1.2268354 ↗
5. Romero · Appl. Phys. Lett. · 1995 · 67 · 165910.1063/1.115048 ↗
6. Huang · Appl. Phys. Lett. · 1997 · 71 · 241510.1063/1.120078 ↗
7. Blochwitz · Appl. Phys. Lett. · 1998 · 73 · 72910.1063/1.121982 ↗
8. Kido · Appl. Phys. Lett. · 1998 · 73 · 286610.1063/1.122612 ↗
9. Yamamori · Appl. Phys. Lett. · 1998 · 72 · 47214710.1063/1.121304 ↗
10. Yamamori · J. Appl. Phys. · 1999 · 86 · 436910.1063/1.371372 ↗
11. Choong · Appl. Phys. Lett. · 2000 · 76 · 95810.1063/1.125904 ↗
12. Ganzorig · Appl. Phys. Lett. · 2000 · 77 · 421110.1063/1.1331640 ↗
13. Pfeiffer · Appl. Phys. Lett. · 1998 · 73 · 320210.1063/1.122718 ↗
14. Blochwitz · Org. Electron. · 2001 · 2 · 9710.1016/S1566-1199(01)00016-7 ↗
15. Zhang · 1997 · 209
16. Khan · J. Appl. Phys. · 2008 · 103 · 01450910.1063/1.2829805 ↗
17. Shi · Appl. Phys. Lett. · 2002 · 80 · 320110.1063/1.1475361 ↗
18. Culligan · Adv. Mater. · 2006 · 16 · 1481
19. Gondek · J. Luminesc. · 2008 · 128 · 183110.1016/j.jlumin.2008.05.003 ↗