Blue organic light-emitting diodes with low driving voltage and enhanced power efficiency based on MoO3 as hole injection layer and optimized charge balance
Source abstract
Abstract
Abstract In this letter, blue organic light-emitting diodes (OLEDs) with a different hole injection layer (MoO 3 or m-MTDATA), and a different electron transport layer (Alq 3 or BPhen) have been investigated. With 9,10-bis(2-naphthyl)-2-t-butylanthracene (TBADN) doped with (3 wt.%) P-bis(P-N,N-diphenyl-aminostyryl)benzene (DSA-Ph) as an emitting layer, the typical device structure is ITO/HIL (5 nm)/NPB (25 nm)/EML (35 nm)/ETL (15 nm)/LiF (0.8 nm)/Al (100 nm). It has been found that MoO 3 //BPhen based device shows the lowest driving voltage and highest power efficiency among the referenced devices. At the current density of 20 mA/cm 2 , its driving voltage and power efficiency is 5.2 V and 4.2 lm/W, which is independently reduced 48% and improved 44% compared with those of the m-MTDATA//Alq 3 based one, respectively. The energy level diagram of the devices and single-carrier devices are studied to explain the reasons behind this improvement. The results strongly indicate that carrier injection ability and balance shows significant affects on the performance of OLED.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Organic Light-Emitting Diodes Research · Organic Electronics and Photovoltaics · Conducting polymers and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (19)
Show source-provided references
1. Tang · Appl. Phys. Lett. · 1987 · 51 · 91310.1063/1.98799 ↗
2. Lee · J. Korean Phys. Soc. · 2006 · 49 · 1052
3. He · Appl. Phys. Lett. · 2004 · 85 · 391110.1063/1.1812378 ↗
4. Meerheim · Appl. Phys. Lett. · 2006 · 89 · 06111110.1063/1.2268354 ↗
5. Romero · Appl. Phys. Lett. · 1995 · 67 · 165910.1063/1.115048 ↗
6. Huang · Appl. Phys. Lett. · 1997 · 71 · 241510.1063/1.120078 ↗
7. Blochwitz · Appl. Phys. Lett. · 1998 · 73 · 72910.1063/1.121982 ↗
8. Kido · Appl. Phys. Lett. · 1998 · 73 · 286610.1063/1.122612 ↗
9. Yamamori · Appl. Phys. Lett. · 1998 · 72 · 47214710.1063/1.121304 ↗
10. Yamamori · J. Appl. Phys. · 1999 · 86 · 436910.1063/1.371372 ↗
11. Choong · Appl. Phys. Lett. · 2000 · 76 · 95810.1063/1.125904 ↗
12. Ganzorig · Appl. Phys. Lett. · 2000 · 77 · 421110.1063/1.1331640 ↗
13. Pfeiffer · Appl. Phys. Lett. · 1998 · 73 · 320210.1063/1.122718 ↗
14. Blochwitz · Org. Electron. · 2001 · 2 · 9710.1016/S1566-1199(01)00016-7 ↗
15. Zhang · 1997 · 209
16. Khan · J. Appl. Phys. · 2008 · 103 · 01450910.1063/1.2829805 ↗
17. Shi · Appl. Phys. Lett. · 2002 · 80 · 320110.1063/1.1475361 ↗
18. Culligan · Adv. Mater. · 2006 · 16 · 1481
19. Gondek · J. Luminesc. · 2008 · 128 · 183110.1016/j.jlumin.2008.05.003 ↗