Formation of nano-crystalline Si by thermal annealing of SiO , SiC and SiO C amorphous alloys: model systems for advanced device processing

Abstract Formation of Si with nanometer sized crystallites by thermal annealing of hydrogenated alloys of SiOx, SiCx, and SiOxCy (x,y∼0.1 to 0.2) amorphous alloys has been studied by infrared (IR) absorption spectroscopy, Raman scattering, and high resolution cross-section transmission electron microscopy (TEM) lattice imaging. The appearance of crystalline features in the Raman spectra, and TEM micrographs coincides with qualitative and quantitative changes in the IR spectra. Crystrallites appear in the SiOx alloys at an annealing temperature of ∼900°C, and at higher temperatures in the SiCx and (Si,C)Ox alloys, 950°C and 1050°C, respectively.